Microwave and millimeter wave passive and active devices are electronic components that operate in the microwave and millimeter wave bands, integrated on a single substrate to form circuits with specific functions. Here are some common microwave and millimeter wave passive and active devices:

Passive components:

Filter: Used to filter signals of specific frequencies, allowing the desired frequency to pass through while suppressing signals of other frequencies.

Coupling: It can distribute the input signal to different output ports in a certain proportion.

Power divider: distributes the power of the input signal to multiple output ports.

Duplex: It separates the transmission and reception signals, allowing the same antenna to receive and transmit at different times.

Looper: It allows signals to only be transmitted in a specific direction and is commonly used to isolate signals between different ports.

Isolator: restricts the reverse transmission of signals and protects source devices.

Antenna: used for transmitting and receiving electromagnetic wave signals.

Active components:

Microwave Low Noise Amplifier (LNA): Used to amplify microwave signals while having a low noise figure to reduce signal noise interference.

Power amplifier: Enhances the power of a signal to enable it to transmit over longer distances or drive larger loads.

Variable frequency converter: realizing the transformation of signal frequency.

Phase shifter: changes the phase of microwave signals.

Attenuator: Reduce the amplitude of the signal by a certain proportion.

Voltage controlled oscillator (VCO): an oscillator whose output frequency is regulated by a controlled voltage.

Single chip microwave integrated oscillator: Integrating the functions of the oscillator onto a single chip.

These devices have wide applications in microwave millimeter wave communication, radar, satellite communication, electronic countermeasures, and other fields. In practical applications, suitable passive and active devices are selected based on specific system requirements and performance requirements, and reasonable circuit design and integration are carried out to achieve the required functions and performance.

Single chip microwave integrated circuit (MMIC) is an integrated circuit that uses semiconductor technology to fabricate microwave functional circuits on chips made of gallium arsenide or other semiconductor materials. The manufacturing process of gallium arsenide monolithic microwave integrated circuits includes forming an active layer on a semi insulating gallium arsenide single crystal by epitaxial growth or ion implantation of silicon; Injecting oxygen or protons to create an isolation layer (or other ions suitable for creating an isolation layer); Inject beryllium or zinc to form a PN junction; Producing metal semiconductor potential barriers through electron beam evaporation; Using sub micron lithography, dry etching, passivation protection and other processes to fabricate active devices (such as diodes, field-effect transistors) and passive components (inductors, capacitors, resistors, microstrip couplers, filters, loads, etc.) as well as circuit graphics.

Compared with hybrid microwave integrated circuits, single-chip integration has higher usage limit frequency, wider bandwidth, better performance consistency, smaller substrate area, and higher integration degree. However, adjustable components cannot be used, and avalanche time diodes with collision avalanche time mode cannot be used in single-chip integration. Computer aided design is necessary for precise circuit design, which can only achieve low cost and low price in mass production.

In the field of millimeter wave integrated circuits, integrated circuits operating in the range of 30-300 gigahertz are called millimeter wave integrated circuits. Gallium arsenide is more suitable than silicon for making single-chip microwave integrated circuits (including ultra high speed circuits), mainly because the resistivity of semi insulating gallium arsenide substrates is as high as 107-109 ohm · cm, and the microwave transmission loss is small; Gallium arsenide has an electron mobility about 5 times higher than silicon, and operates at a high frequency and speed; Gallium arsenide metal semiconductor field-effect transistor, a key active device, is a multifunctional device with good radiation resistance. Gallium arsenide monolithic microwave integrated circuits have broad application prospects in solid-state phased array radar, electronic countermeasures equipment, tactical missiles, television satellite reception, microwave communication and ultra high speed computers, large capacity information processing, and other fields. The single-chip microwave integrated circuits that have been successfully developed and gradually put into practical use include single-chip microwave integrated low-noise amplifiers, single-chip TV satellite receiver front-end, single-chip microwave power amplifiers, single-chip microwave voltage controlled oscillators, etc.

If you want to learn more specific information about microwave and millimeter wave passive and active devices, you can consult relevant professional books, papers, or consult professional electronic engineers. At the same time, with the continuous development of technology, new devices and technologies are constantly emerging. Paying attention to the latest developments in the industry will help to understand more relevant information.